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High Input Impedance N Channel Transistor , Field Emission Transistor 600V

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Shenzhen Canyi Technology Co., Ltd.

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High Input Impedance N Channel Transistor , Field Emission Transistor 600V

Brand Name : JC

Model Number : OSPF2N60

Certification : RoHS

Place of Origin : Jiangxi, China

MOQ : Negotiable

Price : Negotiated

Payment Terms : Telegraphic Transfer in Advance (Advance TT, T/T)

Supply Ability : 15,000,000PCS Per Day

Delivery Time : 1 - 2 Weeks

Packaging Details : Boxed

Name : N Channel Transistor

Drain-Source Voltage : 600V

Gate-Source Voltage-Continuous : ±30V

Drain Current-Continuous（Note 2） : 2A

Drain Current-Single Plused（Note 1） : 8A

Power Dissipation （Note 2) : 23W

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High Input Impedance N Channel Transistor , Field Emission Transistor 600V

N Channel Transistor Features

High input impedance and low level drive
Avalanche energy tested
Improved dv/dt capability,high ruggedness

N Channel Transistor Applications

High efficiency switch mode power supplies
Power factor correction
Electronic lamp ballast
Uninterruptible power supply
Power switching application

Absolute Maximum Ratings (Tc=25°C)

Symbol	Parameters	Ratings	Unit
V_DSS	Drain-Source Voltage	600	V
V_GS	Gate-Source Voltage-Continuous	±30	V
I_D	Drain Current-Continuous(Note 2)	2	A
I_DM	Drain Current-Single Plused(Note 1)	8	A
P_D	Power Dissipation (Note 2)	23	W
T_j	Max.Operating junction temperature	150	℃

Electrical characteristics (Tc=25°C unless otherwise noted)

Symbol		Parameters		Min	Typ	Max	Units	Conditions
Static Characteristics
B_VDSS		Drain-Source Breakdown VoltageCurrent (Note 1)		600	--	--	V	I_D=250µA,V_GS=0V,T_J=25°C
V_GS(th)		Gate Threshold Voltage		2.0	--	4.0	V	V_DS=V_GS,I_D=250μA
R_DS(on)		Drain-Source On-Resistance		--	3.6	4.0	Ω	V_GS=10V,I_D=1A
I_GSS		Gate-Body Leakage Current		--	--	±100	nA	V_GS=±30V,V_DS=0
I_DSS		Zero Gate Voltage Drain Current		--	--	1	μA	V_DS=600V,V_GS=0
gfs		Forward Transconductance		1.0	--	--	S	V_D_S=15V,I_D=1A
Switching Characteristics
T_d(on)		Turn-On Delay Time	--		40	60	ns	V_DS=300V,I_D=2A, R_G=25Ω(Note 2)
T_r		Rise Time	--		35	55	ns
T_d(_off₎		Turn-Off Delay Time	--		70	95	ns
T_f		Fall Time	--		45	65	ns
Q_g		Total Gate Charge	--		9	15	nC	V_DS=480V,V_GS=10V, I_D=2A(Note 2)
Q_gs		Gate-Source Charge	--		1.5	--	nC
Q_gd		Gate-Drain Charge	--		4.5	--	nC
Dynamic Characteristics
C_iss	Input Capacitance		--		260	350	pF	V_DS=25V,V_GS=0, f=1MHz
C_oss	Output Capacitance		--		38	50	pF
C_rss	Reverse Transfer Capacitance		--		8	20	pF
I_S	Continuous Drain-Source Diode Forward Current(Note 2)		--		--	2	A
V_SD	Diode Forward On-Voltage		--		--	1.4	V	I_S=2A,V_GS=0
R_th(j-c)	Thermal Resistance, Junction to Case		--		--	5.5	℃/W

Our Service

1. Efficient Servicer: Professional and Efficient services, Feedback in 24 hours. Full range products for choice.

2. Factory Choice: We are professional supplier. OEM / ODM are Available. We also supply search service for you if you need . We have professional purchasing department to supply the latest goods and best seller products.

3. QC Service: Great Quality Check, We know how to do good check quality. We have 19 years experience professional QC team.

4. Logistic Service: We would like to assist our customer to make QC + collect goods from other supplier.

5. Long-Term Service: We are looking for long-term business PARTNER! So we supply excellent service and can design as your request.

Product Tags:

mosfet power transistor

high power transistor

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