AP85N03NF Power field effect Transistor MOSFET SMD N-Channel with Load switch
Description
The AP85N03NF uses advanced trench technology to provide excellent R DS(ON)
low gate charge and operation with gate voltages as low as 4.5V.
This device is suitable for use as a Battery protection or in other Switching application.
General Features
V DS = 30V I D =85 A R DS(ON) < 4mΩ @ V GS =10V
Application
Battery protection
Load switch
Uninterruptible power supply
DFN5*6-8L
N-Channel MOSFET
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
| Symbol |
Parameter |
Rating |
Units |
| VDS |
Drain-Source Voltage |
30 |
V |
| VGS |
Gate-Source Voltage |
±20 |
V |
| ID@TC=25℃ |
Continuous Drain Current, VGS @ 10V1,6 |
85 |
A |
| ID@TC=100℃ |
Continuous Drain Current, VGS @ 10V1,6 |
68 |
A |
| IDM |
Pulsed Drain Current2 |
216 |
A |
| EAS |
Single Pulse Avalanche Energy3 |
144.7 |
mJ |
| IAS |
Avalanche Current |
53.8 |
A |
| PD@TC=25℃ |
Total Power Dissipation4 |
69 |
W |
| PD@TA=25℃ |
Total Power Dissipation4 |
5 |
W |
| TSTG |
Storage Temperature Range |
-55 to 175 |
℃ |
| TJ |
Operating Junction Temperature Range |
-55 to 175 |
℃ |
| RθJA |
Thermal Resistance Junction-Ambient 1 |
62 |
℃/W |
| RθJA |
Thermal Resistance Junction-Ambient 1 (t ≤10s) |
25 |
℃/W |
| RθJC |
Thermal Resistance Junction-Case1 |
1.8 |
℃/W |
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
| Symbol |
Parameter |
Conditions |
Min. |
Typ. |
Max. |
Unit |
| BVDSS |
Drain-Source Breakdown Voltage |
VGS=0V , ID=250uA |
30 |
--- |
--- |
V |
| △BVDSS/△TJ |
BVDSS Temperature Coefficient |
Reference to 25℃ , ID=1mA |
--- |
0.0213 |
--- |
V/℃ |
| RDS(ON) |
Static Drain-Source On-Resistance2 |
VGS=10V , ID=30A |
--- |
2.2 |
4 |
mΩ |
| VGS=4.5V , ID=15A |
--- |
4.8 |
|
| |
| VGS(th) |
Gate Threshold Voltage |
VGS=VDS , ID =250uA |
1.2 |
1.7 |
2.5 |
V |
| |
| △VGS(th) |
VGS(th) Temperature Coefficient |
--- |
-5.73 |
--- |
mV/℃ |
| IDSS |
Drain-Source Leakage Current |
VDS=24V , VGS=0V , TJ=25℃ |
--- |
--- |
1 |
uA |
| VDS=24V , VGS=0V , TJ=55℃ |
--- |
--- |
5 |
| |
| IGSS |
Gate-Source Leakage Current |
VGS=±20V , VDS=0V |
--- |
--- |
±100 |
|
| nA |
| gfs |
Forward Transconductance |
VDS=5V , ID=30A |
--- |
26.5 |
--- |
S |
| Rg |
Gate Resistance |
VDS=0V , VGS=0V , f=1MHz |
--- |
1.4 |
--- |
|
| Qg |
Total Gate Charge (4.5V) |
VDS=15V , VGS=4.5V , ID=15A |
--- |
98 |
--- |
nC |
| Qgs |
Gate-Source Charge |
--- |
11 |
--- |
| Qgd |
Gate-Drain Charge |
--- |
21 |
--- |
| Td(on) |
Turn-On Delay Time |
VDD=15V , VGS=10V ,
RG=3.3
ID=15A |
--- |
17 |
--- |
ns |
| ns |
| Tr |
Rise Time |
--- |
41 |
--- |
ns |
| ns |
| Td(off) |
Turn-Off Delay Time |
--- |
55 |
--- |
| ns |
| ns |
| Tf |
Fall Time |
--- |
66 |
--- |
ns |
| Ciss |
Input Capacitance |
VDS=15V , VGS=0V , f=1MHz |
--- |
5471 |
--- |
pF |
| pF |
| Coss |
Output Capacitance |
--- |
1628 |
--- |
pF |
| Crss |
Reverse Transfer Capacitance |
--- |
1026 |
--- |
pF |
| IS |
Continuous Source Current1,5 |
VG=VD=0V , Force Current |
--- |
--- |
130 |
A |
| A |
| ISM |
Pulsed Source Current2,5 |
--- |
--- |
520 |
A |
| |
| VSD |
Diode Forward Voltage2 |
VGS=0V , IS=1A , TJ=25℃ |
--- |
--- |
1.2 |
V |
Note :
1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is V DD =25V,V GS =10V,L=0.1mH,I AS =53.8A
4.The power dissipation is limited by 175℃ junction temperature
5.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.
6.Package limitation current is 85A.
For more information please refer to the attachment, or contact us:
Product Tags:
|
|
AP85N03NF Power Field Effect Transistor MOSFET SMD N Channel With Load Switch Images
|
